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2SK2330S

Part Number	2SK2330S
Manufacturer	Hitachi
Description	Silicon N-Channel MOS FET
Published	Sep 3, 2018
Detailed Description	2SK2330(L), 2SK2330(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • ...
Datasheet	2SK2330S PDF File

Overview

2SK2330(L), 2SK2330(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1.
Gate 2.
Drain 3.
Source S 4.
Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ratings 500 ±30 15 60 15 1...

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