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12N50C

Vishay
Part Number 12N50C
Manufacturer Vishay
Description Power MOSFET
Published Sep 5, 2018
Detailed Description SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Ma...
Datasheet PDF File 12N50C PDF File

12N50C
12N50C

Overview
SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 48 12 15 Single TO-220AB TO-220 FULLPAK 0.
555 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP12N50C-E3 D2PAK (TO-263) SiHB12N50C-E3 TO-220 FULLPAK SiHF12N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) LIMIT PARAMETER TO220-AB SYMBOL D2PAK (TO-263) TO-220 FULLPAK Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Re...


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