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ADM20N06E

Part Number	ADM20N06E
Manufacturer	ADV
Description	N-Channel MOSFET
Published	Sep 11, 2018
Detailed Description	ADV ADM20N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 6...
Datasheet	ADM20N06E PDF File

Overview

ADV ADM20N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation 1.
Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C Thermal Characteristics Symbol Parameter RthJC RthJA Thermal resistance junction-case max Thermal resistance junction-ambient max Ratings 60 ±20 150 -55 to 150 22 80 22 18 50 32 Ratings 2.
5 55 Unit V °C °C A A A A W W Unit °C/W °C/W 1/6 www.
advsemi.
com Ver.
0.
11 ...

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