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ADM12N03S

ADV
Part Number ADM12N03S
Manufacturer ADV
Description N-Channel MOSFET
Published Sep 11, 2018
Detailed Description                         ADV     ADM12N03S  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 3...
Datasheet PDF File ADM12N03S PDF File

ADM12N03S
ADM12N03S


Overview
                        ADV     ADM12N03S  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V ID 12A RDS(ON) (mΩ) 9.
0mΩ SOP-8 S S S G D D D D Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ TC=25°C ID Continuous Drain Current TC=25°C PD Maximum Power Dissipation 1.
Pulse width limited by maximum junction temperature.
TC=25°C Thermal Characteristics Symbol Parameter RthJC RthJA Thermal resistance junction-case max Thermal resistance junction-ambient max Ratings 30 ±20 150 -55 to 150 12 42 12 1.
5 Ratings 36 85 Unit V °C °C A A A W Unit °C/W °C/W   1/6 www.
advsemi.
com Ver.
0.
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