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ADM4N06A

ADV
Part Number ADM4N06A
Manufacturer ADV
Description N-Channel MOSFET
Published Sep 11, 2018
Detailed Description                         ADV     ADM4N06A  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60...
Datasheet PDF File ADM4N06A PDF File

ADM4N06A
ADM4N06A

Overview
                        ADV     ADM4N06A  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 4.
6A RDS(ON) (mΩ) 90mΩ SOT-89 2 1  2  3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current（3） TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation 1.
Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C Thermal Characteristics Symbol Paramet...


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