DatasheetsPDF.com

ADM24N10E

Part Number	ADM24N10E
Manufacturer	ADV
Description	N-Channel MOSFET
Published	Sep 11, 2018
Detailed Description	ADV ADM24N10E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 1...
Datasheet	ADM24N10E PDF File

Overview

ADV ADM24N10E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 24A RDS(ON) (mΩ) 53mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation 1.
Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C Thermal Characteristics Symbol Parameter RthJC RthJA Thermal resistance junction-case max Thermal resistance junction-ambient max Ratings 100 ±20 150 -55 to 150 24 100 24 18 56 35 Ratings 2.
5 55 Unit V °C °C A A A A W W Unit °C/W °C/W 1/6 www.
advsemi.
com Ver.
0.
11 ...

Similar Datasheet

ADM24N10E N-Channel MOSFET - ADV

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)