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ADM200N06

ADV
Part Number ADM200N06
Manufacturer ADV
Description N-Channel MOSFET
Published Sep 11, 2018
Detailed Description                         ADV     ADM200N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 6...
Datasheet PDF File ADM200N06 PDF File

ADM200N06
ADM200N06


Overview
                        ADV     ADM200N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 198A RDS(ON) (mΩ) 3.
8mΩ TO220C Features: ● Low gate input resistance ● High dv/dt and avalanche capabilities ●100% EAS Guaranteed ● Advanced high cell density Trench technology ● Lead-Free,RoHS Compliant 1  2  3  Description: The AM200N06 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process.
This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current（1,6） TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested（2...


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