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PD55025-E

STMicroelectronics
Part Number PD55025-E
Manufacturer STMicroelectronics
Description RF POWER transistor
Published Sep 20, 2018
Detailed Description PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ ...
Datasheet PDF File PD55025-E PDF File

PD55025-E
PD55025-E

Overview
PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.
5dB gain @ 500 MHz / 12.
5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
The device’s super...


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