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FFD08S60S-F085

ON Semiconductor
Part Number FFD08S60S-F085
Manufacturer ON Semiconductor
Description STEALTH-2 Rectifier
Published Sep 26, 2018
Detailed Description Rectifier – STEALTHt II 8 A, 600 V FFD08S60S-F085 The FFD08S60S−F085 is stealth 2 rectifier with soft recovery charact...
Datasheet PDF File FFD08S60S-F085 PDF File

FFD08S60S-F085
FFD08S60S-F085

Overview
Rectifier – STEALTHt II 8 A, 600 V FFD08S60S-F085 The FFD08S60S−F085 is stealth 2 rectifier with soft recovery characteristics (trr < 30 ns).
They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion−implanted epitaxial planar construction.
This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications.
Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Features • High Speed Switching (Max.
trr < 30 ns @ IF = 8 A) • High Reverse Voltage and High Reliability • Avalanche Energy Rated • AEC−Q101 Qualified and PPAP Capable • Pb−Free and RoHS Compliant Applications • General Purpose • Switching Mode Power Supply • Boost Diode in Continuous Mode Power Factor Corrections • Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 8 A @ TC = 115°C IFSM Non−repetitive Peak Surge Current 80 A 60 Hz Single Half−Sine Wave TJ, TSTG Operating Junction and Storage Temperature −65 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit RθJC Maximum Thermal Resistance, Junction to Case 3.
0 °C/W www.
onsemi.
com Cathode Anode Cathode Anode DPAK3 CASE 369AS Cathode (Flange) MARKING DIAGRAM $Y&Z&3&K F08S60S $Y &Z &3 &K F08S60S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION Device FFD08S...


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