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BDT31F

INCHANGE
Part Number BDT31F
Manufacturer INCHANGE
Description Silicon NPN Power Transistors
Published Sep 29, 2018
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BDT31F/AF/BF/CF/DF DESCRIPTION ·DC ...
Datasheet PDF File BDT31F PDF File

BDT31F
BDT31F

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BDT31F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.
0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF ·Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Tstg BDT31F Collector-Base Voltage BDT31AF BDT31BF BDT31CF BDT31DF BDT31F Collector-Emitter Voltage BDT31AF BDT31BF BDT31CF BDT31DF Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range 80 100 120 140 160 40 60 80 100 120 5 3 5 1 22 150 -65~150 V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS...


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