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PFU2N100G

Part Number	PFU2N100G
Manufacturer	Wing On
Description	N-Channel MOSFET
Published	Oct 5, 2018
Detailed Description	PFU2N100G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Ca...
Datasheet	PFU2N100G PDF File

Overview

PFU2N100G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 6.
2 Ω (Typ.
) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFU2N100G 1000V N-Channel MOSFET BVDSS = 1000 V RDS(on) = 6.
2 Ω ID = 1.
9 A Drain  Gate  ● ◀▲ ● ●  Source I-PAK(TO-251) 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volta...

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PFU2N100G N-Channel MOSFET - Wing On

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