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PFI6N90GN

Wing On
Part Number PFI6N90GN
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description PFI6N90GN FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Ca...
Datasheet PDF File PFI6N90GN PDF File

PFI6N90GN
PFI6N90GN

Overview
PFI6N90GN FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 1.
95 Ω (Typ.
) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFI6N90GN 900V N-Channel MOSFET BVDSS = 900 V RDS(on) = 1.
95 Ω ID = 5.
6 A TO-262N-3L Drain  Gate  ● ◀▲ ● ●  Source G D S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy...


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