DatasheetsPDF.com

PFU3N80EG

Wing On
Part Number PFU3N80EG
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description PFU3N80EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Ca...
Datasheet PDF File PFU3N80EG PDF File

PFU3N80EG
PFU3N80EG

Overview
PFU3N80EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 4.
0 Ω (Typ.
) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFU3N80EG 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 4.
0 Ω ID = 2.
5 A Drain  Gate  ● ◀▲ ● ●  Source I-PAK(TO-251) 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)