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PFP10N60

Wing On
Part Number PFP10N60
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extrem...
Datasheet PDF File PFP10N60 PDF File

PFP10N60
PFP10N60

Overview
Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
78 Ω (Typ.
) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP10N60/PFF10N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.
78 Ω ID = 9.
5 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP10N60 PFF10N60 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed...


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