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PFZ20N50E

Wing On
Part Number PFZ20N50E
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description Nov 2010 PFZ20N50E / PFW20N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extr...
Datasheet PDF File PFZ20N50E PDF File

PFZ20N50E
PFZ20N50E

Overview
Nov 2010 PFZ20N50E / PFW20N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
26 Ω (Typ.
) @VGS=10V PFZ20N50E/PFW20N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.
26 Ω ID = 18 A Drain  Gate  ● ◀▲ ● ●  Source APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) TO-247 1 2 3 1.
Gate 2.
Drain 3.
Source TO-3P 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFZ20N50E PFW20N50E VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single...


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