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PFW10N80

Wing On
Part Number PFW10N80
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description May 2007 PFJ10N80 / PFW10N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extrem...
Datasheet PDF File PFW10N80 PDF File

PFW10N80
PFW10N80

Overview
May 2007 PFJ10N80 / PFW10N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
92 Ω (Typ.
) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ10N80/PFW10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.
15 Ω ID = 10 A TO-247 Drain  Gate  ● ◀▲ ● ●  Source TO-3P 1 2 3 1.
Gate 2.
Drain 3.
Source 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (...


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