DatasheetsPDF.com

PFJ9N90

Wing On
Part Number PFJ9N90
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description May 2007 PFJ9N90 / PFW9N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremel...
Datasheet PDF File PFJ9N90 PDF File

PFJ9N90
PFJ9N90

Overview
May 2007 PFJ9N90 / PFW9N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 1.
12 Ω (Typ.
) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ9N90 / PFW9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) = 1.
4 Ω ID = 9 A TO-247 Drain  Gate  ● ◀▲ ● ●  Source TO-3P 1 2 3 1.
Gate 2.
Drain 3.
Source 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)