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IS46TR16512A

Part Number	IS46TR16512A
Manufacturer	ISSI
Description	512M x 16 8Gb DDR3 SDRAM
Published	Oct 8, 2018
Detailed Description	IS43/46TR16512A, IS43/46TR16512AL 512Mx16 8Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  L...
Datasheet	IS46TR16512A PDF File

Overview

IS43/46TR16512A, IS43/46TR16512AL 512Mx16 8Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.
5V ± 0.
075V  Low Voltage (L): VDD and VDDQ = 1.
35V + 0.
1V, -0.
067V -Backward compatible to 1.
5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) OPTIONS  Configuration: 512Mx16(dual die)  Package: 96-ball BGA (10mm x 14mm) ADDRESS TABLE FEBRUARY 2018  Refresh Interval: 7.
8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.
9 us (8192 cycles/32 ms) Tc= 85°C to 105°C  Partial Array Self Refresh  Asynchronous RESET pin  OCD (Off-Chip Driver Impedance Adjus...

Similar Datasheet

IS46TR16512A 512M x 16 8Gb DDR3 SDRAM - ISSI
IS46TR16512AL 512M x 16 8Gb DDR3 SDRAM - ISSI
IS46TR16512B 8Gb DDR3 SDRAM - ISSI
IS46TR16512BL 8Gb DDR3 SDRAM - ISSI

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