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PTAB182002FC

Part Number	PTAB182002FC
Manufacturer	Wolfspeed
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Oct 10, 2018
Detailed Description	PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a...
Datasheet	PTAB182002FC PDF File

Overview

PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flange.
Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 530 mA, ƒ = 1842 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, 3.
84MHz BW 17 55 50 16 45 Gain 40 15 35 30 14 25 Efficienc...

Similar Datasheet

PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET - Wolfspeed

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