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C2M0080170P

Cree
Part Number C2M0080170P
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Oct 10, 2018
Detailed Description VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 m...
Datasheet PDF File C2M0080170P PDF File

C2M0080170P
C2M0080170P

Overview
VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode Features Package • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low On-resistance • High speed switching with low capacitances • Easy to parallel and simple to drive • Halogen Free, RoHS compliant TAB Drain Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • 1500V Solar Inverters • Switch ...


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