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TSM4NC60CI

Part Number	TSM4NC60CI
Manufacturer	Taiwan Semiconductor
Description	N-Channel Power MOSFET
Published	Oct 15, 2018
Detailed Description	TSM4NC60CI Taiwan Semiconductor N-Channel Power MOSFET 600V, 4A, 2.5Ω FEATURES ● 100% UIS and Rg tested ● Advanced pla...
Datasheet	TSM4NC60CI PDF File

Overview

TSM4NC60CI Taiwan Semiconductor N-Channel Power MOSFET 600V, 4A, 2.
5Ω FEATURES ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● AC/DC LED Lighting ● Power Supply KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 V 2.
5 Ω 18 nC ITO-220 Not Recommended ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulse Avalanche En...

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TSM4NC60CI N-Channel Power MOSFET - Taiwan Semiconductor

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