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MD8IC925NR1

Part Number	MD8IC925NR1
Manufacturer	NXP
Description	RF LDMOS Wideband Integrated Power Amplifiers
Published	Oct 18, 2018
Detailed Description	NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circ...
Datasheet	MD8IC925NR1 PDF File

Overview

NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz.
This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats.
Driver Application — 900 MHz  Typical single--carrier W--CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.
5 W Avg.
, IQ magnitude clipping, channel bandwidth = 3.
84 MHz, input signal PAR = 7.
5 dB @ 0.
01% probability on CCDF.
Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 36.
2 17.
5 --48.
9 940 MHz 36.
2 17.
4 --49.
5 960 MHz 36.
1 17.
3...

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MD8IC925NR1 RF LDMOS Wideband Integrated Power Amplifiers - NXP

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