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AS4C32M16SC-7TIN

Alliance Semiconductor
Part Number AS4C32M16SC-7TIN
Manufacturer Alliance Semiconductor
Description 512M SDRAM
Published Oct 25, 2018
Detailed Description Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.0 Preliminary datasheet AS4C16M32SC-7TIN AS...
Datasheet PDF File AS4C32M16SC-7TIN PDF File

AS4C32M16SC-7TIN
AS4C32M16SC-7TIN

Overview
Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.
0 Preliminary datasheet AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Date Sep.
2018 Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc.
reserves the right to change products or specification without notice Confidential - 1 of 24 - Rev.
1.
0 Sep.
2018 AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN 1 Overview This chapter gives an overview of the 512-Mbit Synchronous DRAM component product and describes its main characteristics.
1.
1 Features • Fully Synchronous to Positive Clock Edge • Fast clock rate: 133 MHz • Multiple Burst Read with Single Write Operation • Four Banks controlled by BA0 & BA1 • Data Mask for Byte Control (x16,x32) • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved • Automatic and Controlled Precharge Command • Auto...


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