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2N2710

Motorola
Part Number 2N2710
Manufacturer Motorola
Description NPN silicon transistor
Published Nov 7, 2018
Detailed Description 2N2710 (SILICON) NPN silicon transistor primarily designed for high-speed, low-power saturated switching applications f...
Datasheet PDF File 2N2710 PDF File

2N2710
2N2710

Overview
2N2710 (SILICON) NPN silicon transistor primarily designed for high-speed, low-power saturated switching applications for industrial service.
CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA = 25° C Derate above 25° C Total Device DisSipation @ T C = 25° C Operating Junction Temperature Range Storage Temperature Range Symbol VCEO VCES VCB VEB IC PD PD TJ Tstg Value 20 30 40 5.
0 500 0.
36 2.
1 1.
2 +200 -65 to +200 Unit Vdc Vdc Vdc Vdc mAdc W mW/oC W °c °c FIGURE 1 - STORAGE TIME TEST CIRCUIT JOV +6.
0VlJ -4.
0 V I" I, ~ 0.
5 ns Zi' ~ 50 ohms 980 500 OSCILLOSCOPE INPUT~ 10Mn ~ 1.
5pF tr = t, ~ 0.
4ns 2-330 2N2710 (continued) ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 10 mAde, IB = 0) Collector-Emitter Breakdo...


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