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4N041R1

Infineon
Part Number 4N041R1
Manufacturer Infineon
Description Power-Transistor
Published Nov 8, 2018
Detailed Description IPLU300N04S4-1R1 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°...
Datasheet PDF File 4N041R1 PDF File

4N041R1
4N041R1


Overview
IPLU300N04S4-1R1 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant); 100% lead free • Ultra low Rds(on) • 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.
15 mW 300 A H-PSOF-8-1 Tab 8 1 Tab 1 8 Type Package IPLU300N04S4-1R1 H-PSOF-8-1 Marking 4N041R1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=150 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - Value 300 277 1200 300 300 ±20 300 -55 .
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+175 Unit A mJ A V W °C Rev.
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0 page 1 2014-11-21 IPLU300N04S4-1R1 Parameter Symbol Conditions Thermal ch...


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