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PMV40UN2

nexperia
Part Number PMV40UN2
Manufacturer nexperia
Description N-Channel MOSFET
Published Nov 8, 2018
Detailed Description PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement m...
Datasheet PDF File PMV40UN2 PDF File

PMV40UN2
PMV40UN2

Overview
PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3.
Applications • LED driver • Power management • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.
5 V; ID = 3.
7 A; Tj = 25 °C Min Typ Max Unit - - 30 V -12 - 12 V [1] - - 4.
4 A - 36 44 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad ...


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