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2N911

Part Number	2N911
Manufacturer	Motorola
Description	NPN silicon annular transistors
Published	Nov 8, 2018
Detailed Description	2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching ...
Datasheet	2N911 PDF File

Overview

2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.
0 O.
!5 2,86 1.
8 0.
975 10.
3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) =ELECTRICAL CHARACTERISTICS (T.
2S'C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage' (IC =30 mAde, IB =0) Collector-Emitter Sustaining Voltage' (IC = 100 mAde, RBE ~ 10 ohms) Collector-Base Breakdown Voltage (IC = 100 pAde, ~ =0) Emitter-Base Breakdown Voltage (~ = 100 pAde...

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