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2N1189

Motorola
Part Number 2N1189
Manufacturer Motorola
Description PNPgermanium transistors
Published Nov 8, 2018
Detailed Description 2Nl189 2Nl190(GERMANIUM) CASE31{l) ' \ (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifie...
Datasheet PDF File 2N1189 PDF File

2N1189
2N1189

Overview
2Nl189 2Nl190(GERMANIUM) CASE31{l) ' \ (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.
· MAXIMUM RATINGS Rating Collector-Base Voltage Symbol VCB Value 45 Unit Vdc Collector-Emitter Voltage VCER 30 Vdc Emitter-Base Voltage VEB 15 Vdc Collector Current (Continuous) Junction, Storage Temperature Collector Dissipation, Ambient (Derate 2.
67 mW1° C above 25° C) Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) ·Limited by pawerdissipation.
IC TJ , Tstg PD 9JA ~C 500*· -65 to +100 200 0.
375 0.
250 mAde °c mW °C/mW °C/mW ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted Characteristic Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0) (VCB= 10 Vdc, IE = 0, TA = + 7loC) Symbol Min TfP Mal Unit -ICBO -- /lAdc -3.
0 10 50 55 100 Emitter-Base Cutoff Current (VEB = 15 Vdc, IC = 0) -lEBO /lAdc 3.
0 10 Collector-Emitter Leakage Current (VCE = 30...


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