DatasheetsPDF.com

NTTFS5C670NL

Part Number	NTTFS5C670NL
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Nov 8, 2018
Detailed Description	NTTFS5C670NL Power MOSFET 60 V, 6.5 mW, 70 A, Single N−Channel Features • Small Footprint (3.3 x 3.3 mm) for Compact D...
Datasheet	NTTFS5C670NL PDF File

Overview

NTTFS5C670NL Power MOSFET 60 V, 6.
5 mW, 70 A, Single N−Channel Features • Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 70 A 49 63 W 31 Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 16 A 11 3.
2 W 1.
6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 440 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.
6 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 68 A EAS 166 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 3) RqJC 2.
4 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 47 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface.
3.
Surface−mounted on FR4 board using a 650 mm2, 2 oz.
Cu pad.
4.
Continuous DC current rating.
Maximum current for pulses as long as 1 second is higher but is dependent...

Similar Datasheet

NTTFS5C670NL Power MOSFET - ON Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)