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MB8279RT

Part Number	MB8279RT
Manufacturer	Fujitsu
Description	CMOS 72K-BIT HIGH-SPEED SRAM
Published	Nov 15, 2018
Detailed Description	April 1990 Edition 3.0 DATA SHEET MB8279RT-201-25 CMOS 72K-BIT HIGH-SPEED SRAM cP FUJITSU 8K Words x 9 Bits Synchronou...
Datasheet	MB8279RT PDF File

Overview

April 1990 Edition 3.
0 DATA SHEET MB8279RT-201-25 CMOS 72K-BIT HIGH-SPEED SRAM cP FUJITSU 8K Words x 9 Bits Synchronous CMOS Static Random Access Memory wHh Automatic Power Down The Fujitsu MB8279RT is a 8,192 words x 9 bits static random access memory fabricated with a CMOS silicon gate process.
Write operation is initiated by an internal wr~e pulse generator, which is driven by the ClK input; therefore, external control of wr~e pulse width is not necessary.
Compared to the traditional RAM, the MB8279RT provides improved system level cycle time because signal skews are not involved.
The MB8279RT is housed in 32-pin plastic skinny DIP and SOP packages.
All pins are TTL compatible and a single +5 V power supply is required.
• Organization: • Access time: 8,192 words x 9 bits W:L - 20 ns max.
(MB8279RT-20) I.
u:s2 - tPE2 - 10 ns max.
W:L - 25 ns max.
(MB8279RT-25) I.
u:s2 -!pez -12 ns max.
• Registered addresses, CS,.
WE and data inputs • Write cancel function by asynchrono...

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MB8279RT CMOS 72K-BIT HIGH-SPEED SRAM - Fujitsu

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