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SSC8029GN2

AFSEMI
Part Number SSC8029GN2
Manufacturer AFSEMI
Description P-Channel Enhancement Mode MOSFET
Published Nov 19, 2018
Detailed Description SSC8029GN2 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 4...
Datasheet PDF File SSC8029GN2 PDF File

SSC8029GN2
SSC8029GN2

Overview
SSC8029GN2 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.
5A  Applications  Load Switch  Portable Devices  DCDC conversion  Charging  Driver for Relay,Solenoid,Motor,LED etc.
  General Description This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.
Excellent thermal an...


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