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Si9952DY

TEMIC
Part Number Si9952DY
Manufacturer TEMIC
Description Dual Enhancement-Mode MOSFET
Published Nov 20, 2018
Detailed Description Si9952DY Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary VDS (V) rDS(on) (W) ID (A) N-Channel P-Cha...
Datasheet PDF File Si9952DY PDF File

Si9952DY
Si9952DY

Overview
Si9952DY Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary VDS (V) rDS(on) (W) ID (A) N-Channel P-Channel 25 –25 0.
10 @ VGS = 10 V 0.
15 @ VGS = 4.
5 V 0.
25 @ VGS = –10 V 0.
40 @ VGS = –4.
5 V "3.
5 "2.
0 "2.
3 "1.
8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6542DQ or Si6543DQ D1 D1 S2 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 G2 Top View S1 N-Channel MOSFET D2 D2 P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 25 –25 "20 "20 "3.
5 "2.
3 "2.
8 "1.
9 "14 "9.
2 1.
7 –1.
6 2.
0 1.
3 –55 to 150 Unit V A W _C Thermal ...


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