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SUB60N06-08

TEMIC
Part Number SUB60N06-08
Manufacturer TEMIC
Description N-Channel MOSFET
Published Nov 21, 2018
Detailed Description TEMIC Siliconix N-Channel Enhancement-Mode 1ransistor 175°C Maximum Junction Temperature SUB60N06-08 Product Summary ...
Datasheet PDF File SUB60N06-08 PDF File

SUB60N06-08
SUB60N06-08


Overview
TEMIC Siliconix N-Channel Enhancement-Mode 1ransistor 175°C Maximum Junction Temperature SUB60N06-08 Product Summary V(BR)nSS (V) 60 rnS(on) (0) 0.
008 In (A) 60a TO-263 D G DS ThpView DRAIN connected to TAB S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Gate-Source Voltage Parameter Continuous Drain Current (TJ = 175°C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range Tc = 25°C Tc = 125°C L= 0.
1 mR TC = 25°C TA = 25°C" Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit ±20 60' 55 240 60 180 150 3.
7 -55 to 175 Unit V A mJ W °C Thermal Resistance Ratings Parameter Symbol Junction-ta-Ambient, PCB Mounte lunction-to-Case RthJA RthJC Notes a.
Package limited.
b.
Duty cycle s 1%.
c.
When mounted on I" square PCB (FR-4 material).
(05/24/94) Advance Information Limit 40 1.
0 Unit 0c/w 6-153 SUB60N06-08 =Specifications (TJ 25°C Unless Otherwise...


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