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2N6849

Part Number	2N6849
Manufacturer	TT
Description	P-CHANNEL POWER MOSFET
Published	Nov 21, 2018
Detailed Description	P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalan...
Datasheet	2N6849 PDF File

Overview

P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage -100V VDG Drain – Gate Voltage RGS = 20KΩ -100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current Tc = 25°C -6.
5A ID Continuous Drain Current Tc = 100°C -4.
1A IDM Pulsed Drain Current (1) -25A PD Total Power Dissipation at Tc = 25°C 25W Derate Above 25°C 0.
2W/°C EAS Single Pulse Avalanche Energy (2)(4) 500mJ TJ Junction Temperature...

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