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AFP3911W

Alfa-MOS
Part Number AFP3911W
Manufacturer Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Published Nov 22, 2018
Detailed Description Alfa-MOS Technology General Description AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP3911W PDF File

AFP3911W
AFP3911W

Overview
Alfa-MOS Technology General Description AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L ) AFP3911W 30V P-Channel Enhancement Mode MOSFET Features z -30V/-3A,RDS(ON)=68mΩ@VGS=-10V z -30V/-2A,RDS(ON)=88mΩ@VGS=-4.
5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package...


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