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AFN5908W

Alfa-MOS
Part Number AFN5908W
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Nov 24, 2018
Detailed Description Alfa-MOS Technology General Description AFN5908W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN5908W PDF File

AFN5908W
AFN5908W

Overview
Alfa-MOS Technology General Description AFN5908W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3X2-8L ) AFN5908W 20V N-Channel Enhancement Mode MOSFET Features z 20V/6.
2A,RDS(ON)=30mΩ@VGS=4.
5V z 20V/4.
6A,RDS(ON)=35mΩ@VGS=2.
5V z 20V/3.
8A,RDS(ON)=45mΩ@VGS=1.
8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC curren...


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