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AFN3309WS

Alfa-MOS
Part Number AFN3309WS
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Nov 24, 2018
Detailed Description Alfa-MOS Technology General Description AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Datasheet PDF File AFN3309WS PDF File

AFN3309WS
AFN3309WS

Overview
Alfa-MOS Technology General Description AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3X3-8L ) AFN3309WS 30V N-Channel Enhancement Mode MOSFET Features  30V/20A,RDS(ON)=4.
5mΩ@VGS=10V  30V/15A,RDS(ON)=6.
8mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3X3-8L package...


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