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HM4435B

H&M Semiconductor
Part Number HM4435B
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4435B uses advanced trench technology to provide exce...
Datasheet PDF File HM4435B PDF File

HM4435B
HM4435B

Overview
HM4435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
GENERAL FEATURES ● VDS = -30V,ID = -9.
1A RDS(ON) < 35mΩ @ VGS=-4.
5V RDS(ON) < 22mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 4435B Marking and pin Assignment Application ●Battery Switch ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 4435B HM4435B SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute M...


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