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HM4441A

H&M Semiconductor
Part Number HM4441A
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4441A N Channel Enhancement Mode MOSFET SCRIPTION HM4441A is the P-Channel logic enhancement mode power field effect...
Datasheet PDF File HM4441A PDF File

HM4441A
HM4441A

Overview
HM4441A N Channel Enhancement Mode MOSFET SCRIPTION HM4441A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8 FEATURE l -60V/-6.
0A, RDS(ON) = 55mΩ (Typ.
) @VGS =-10V l -60V/-5.
0A, RDS(ON) = 73mΩ @VGS = -4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design ...


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