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HM5853

H&M Semiconductor
Part Number HM5853
Manufacturer H&M Semiconductor
Description P-Channel MOSFET
Published Nov 27, 2018
Detailed Description +0 HM5853 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features  Pin configuration P-Channel Top v...
Datasheet PDF File HM5853 PDF File

HM5853
HM5853

Overview
+0 HM5853 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features  Pin configuration P-Channel Top view VDS VGS RDSON Typ.
ID 130mR@-4V5 -20V ±8V 170mR@-2V5 -2A 230mR@-1V8 Schottky VR IR VF Typ.
IO 20V 15uA 410mV @0.
5A 1A  Description HM5853 combines an PChannel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode.
The tiny and thin outline saves PCB consumption.
 Applications  Li-Battery Charging  High Side DC/DC Converter  High Side Driver for Brushless DC motor  Power Management in Portable, Battery Powered Devices Bottom View JA Marking  Ordering Information Device HM5853 Package Shipping DFN3X2 3000/Reel +0  Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Unit P-MOS VDSS Drain-to-Source Voltage -20 V VGSS Gate-to-Source Voltage ±8 V ID Continuous Drain Current -2 A IDM Pulsed Drain Current -8 A Schottky Diode VR Schottky Reverse Voltage 20 V IF Schottky Continuous Forward Current 1 A Power Dissipation and Temperature PD Power Dissipation 2.
2 W TJ Operation junction temperature -55 to 150 ℃ TSTG Storage temperature range -55 to 150 ℃  Thermal Resistance Ratings(TA=25℃ unless otherwise noted) Symbol Parameter Value RθJA Junction-to-Ambient Thermal Resistance 59 Unit ℃/W  Electronics Characteristics(TA=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ.
Max Unit Schottky Reverse BV IR=100uA 20 V Breakdown Voltage Forward Voltage VF Drop IF=0.
5A 0.
41 0.
45 V Maximum reverse IR leakage current VR=20V 15 200 uA +0 Symbol Parameter Test Conditions Min Typ.
Max Unit P-Channel Enhancement Mode MOSFET Drai n-So urce V(BR)DSS VGS=0V , ID=-250uA -20 V Breakdown Voltage VGS（th） Gate Threshold Voltage VDS=VGS , ID=-250uA -0.
5 -0.
6 -1.
2 V RDS(on) Drain-Source OnResistance VGS=-4.
5V,ID=-0.
5A VGS=-2.
5V,I...


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