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HM3018JR

H&M Semiconductor
Part Number HM3018JR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description J e PMNUgo SOT-723 Plastic-Encapsulate MOSFETS HM3018JR N-Channel MOSFET V(BR)DSS RDS(on)MAX  8Ω@4V  30 V 13Ω@2.5V  ...
Datasheet PDF File HM3018JR PDF File

HM3018JR
HM3018JR

Overview
J e PMNUgo SOT-723 Plastic-Encapsulate MOSFETS HM3018JR N-Channel MOSFET V(BR)DSS RDS(on)MAX  8Ω@4V  30 V 13Ω@2.
5V   ID 100mA SOT-723 1.
GATE 2.
SOURCE 3.
DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Drive circuits can be simple z Parallel use is easy MARKING APPLICATION z Interfacing , Switching Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Continuous drain current Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature * Pw≤10µs ,Duty cycle≤1% Symbol VDS VGS ID PD RθJA TJ Tstg Value 30 ±20 ±100 0.
15 833 150 -55 ~+150 Unit V mA W ℃/W ℃ MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Drain-source breakdown voltage V(BR) DSS Gate-source leakage current IGSS Zero gate voltage drain current IDSS Gate threshold...


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