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HM2318A

H&M Semiconductor
Part Number HM2318A
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2318A N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM2318A is the N-Channel logic enhancement mode power field e...
Datasheet PDF File HM2318A PDF File

HM2318A
HM2318A

Overview
HM2318A N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM2318A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
   FEATURES ● RDS(ON) ≦28mΩ@VGS=10V ● RDS(ON) ≦38mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC  Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) ...


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