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HM4410B

H&M Semiconductor
Part Number HM4410B
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4410B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410B uses advanced trench technology and design to p...
Datasheet PDF File HM4410B PDF File

HM4410B
HM4410B

Overview
HM4410B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES ● VDS =30V,ID =12A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.
5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply 4410B Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 4410B HM4410B SOP-8 Ree...


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