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HM4302B

H&M Semiconductor
Part Number HM4302B
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4302B uses advanced trench technology and design to provide ex...
Datasheet PDF File HM4302B PDF File

HM4302B
HM4302B


Overview
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
HM4302B GENERAL FEATURES ●VDS =30V,ID =25A RDS(ON) < 5.
5mΩ @ VGS=10V RDS(ON) < 7.
0mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Schematic diagram HM4302B Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package HM4302B HM4302B SOP-8 Re...



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