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AFN2318A

Part Number	AFN2318A
Manufacturer	Alfa-MOS
Description	N-Channel MOSFET
Published	Nov 29, 2018
Detailed Description	Alfa-MOS Technology General Description AFN2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet	AFN2318A PDF File

Overview

Alfa-MOS Technology General Description AFN2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 ) AFN2318A 40V N-Channel Enhancement Mode MOSFET Features 40V/2.
6A,RDS(ON)= 68mΩ@VGS=10V 40V/2.
2A,RDS(ON)= 88mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Applica...

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