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12N65M5

STMicroelectronics
Part Number 12N65M5
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Nov 30, 2018
Detailed Description STF12N65M5, STP12N65M5 Datasheet N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 pac...
Datasheet PDF File 12N65M5 PDF File

12N65M5
12N65M5

Overview
STF12N65M5, STP12N65M5 Datasheet N-channel 650 V, 390 mΩ typ.
, 8.
5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages TAB 123 TO-220FP 123 TO-220 D(2, TAB) Features Order code VDS @ TJ max.
RDS(on) max.
STF12N65M5 STP12N65M5 710 V 430 mΩ • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested ID 8.
5 A G(1) S(3) Applications • Switching applications AM01475v1_noZen Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.
The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Product status links STF12N65M5 STP12N65M5 Product summary Order code STF12N65M5 Marking 12N65M5 Package TO-220FP Packing Tube Order code STP12N65M5 Marking 12N65M5 Package TO-220 Packing Tube DS6117 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com STF12N65M5, STP12N65M5 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.
) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature range TJ Operating junction temperature range 1.
Limited by maximum junction temperature.
2.
Pulse width is limited by safe operating area.
3.
ISD ≤ 8.
5 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD =...


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