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12N65

Unisonic Technologies
Part Number 12N65
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 1, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 12N65 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65 are N-Channel enhancem...
Datasheet PDF File 12N65 PDF File

12N65
12N65

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 12N65 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power supply.
To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.
 FEATURES * RDS(ON) < 0.
85Ω @ VGS = 10V, ID = 6.
0A * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-583.
E 12N65  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N65L-TA3-T 12N65G-TA3-T 12N65L-TF1-T 12N65G-TF1-T 12N65L-TF2-T 12N65G-TF2-T 12N65L-TF3-T 12N65G-TF3-T 12N65L-T2Q-T 12N65G-T2Q-T 12N65L-TQ2-T 12N65G-TQ2-T 12N65L-TQ2-R 12N65G-TQ2-R 12N65L-T3P-T 12N65G-T3P-T 12N65L-T3N-T 12N65G-T3N-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-262 TO-263 TO-263 TO-3P TO-3PN Power MOSFET Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tape Reel Tube Tube  MARKING UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 8 QW-R502-583.
E 12N65 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 12 A Drain Current Continuous Pulsed (Note 2) ID IDM 12 A 48 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 790 mJ 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns TO-220/TO-262 TO-26...


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