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AFN6800WS

Part Number	AFN6800WS
Manufacturer	Alfa-MOS
Description	N-Channel MOSFET
Published	Dec 1, 2018
Detailed Description	Alfa-MOS Technology General Description AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Datasheet	AFN6800WS PDF File

Overview

Alfa-MOS Technology General Description AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 ) AFN6800WS 30V N-Channel Enhancement Mode MOSFET Features 30V/4.
0A,RDS(ON)=34mΩ@VGS=10V 30V/3.
2A,RDS(ON)=38mΩ@VGS=4.
5V 30V/2.
5A,RDS(ON)=42mΩ@VGS=2.
5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No.
Part Marking Package AFN6800WSTS6RG 80WYW TSOP-6 ϡʳ 80W parts code ϡʳ Y ϡʳ W year code ( 0 ~ 9 ) week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN6800WSTS...

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AFN6800WS N-Channel MOSFET - Alfa-MOS

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