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AFN6561

Part Number	AFN6561
Manufacturer	Alfa-MOS
Description	N-Channel MOSFET
Published	Dec 1, 2018
Detailed Description	Alfa-MOS Technology General Description AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Datasheet	AFN6561 PDF File

Overview

Alfa-MOS Technology General Description AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 ) AFN6561 30V N-Channel Enhancement Mode MOSFET Features 30V/3.
6A,RDS(ON)=75mΩ@VGS=10V 30V/3.
0A,RDS(ON)=102mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Ga...

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