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AFN1912E

Alfa-MOS
Part Number AFN1912E
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Dec 1, 2018
Detailed Description Alfa-MOS Technology General Description AFN1912E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN1912E PDF File

AFN1912E
AFN1912E

Overview
Alfa-MOS Technology General Description AFN1912E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 ) AFN1912E 20V N-Channel Enhancement Mode MOSFET Features 20V/1.
8A,RDS(ON)=280mΩ@VGS=4.
5V 20V/1.
5A,RDS(ON)=340mΩ@VGS=2.
5V 20V/1.
2A,RDS(ON)=580mΩ@VGS=1.
8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-363 package design Application ...


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